Growth and Characterization of single crystal InAs nanowire arrays and their application to plasmonics
نویسندگان
چکیده
The growth of single crystal InAs nanowire arrays on crystalline and amorphous substrates is described. This method is quite simple and fast, and uses only a bare InAs substrate as a source and a gold colloid on the growth substrate. High quality InAs nanowires can be produced by this technique, with the nanowire diameter controllable by the gold colloid size and the nanowire length controlled by the growth time and growth temperature. By a proper choice of substrate, parallel, non-interacting nanowire arrays can be formed, as well as arrays exhibiting a cross-over geometry. These geometries can have a significant impact on the plasmonic properties, specifically on surface enhanced Raman (SERS). Results indicate a significantly enhanced SERS signal for nanowire arrays which contain wire crossings, which is explained in terms of electric field “hot” spots.
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